r 201510f 1/6 ?? triacs BT131 ? main characteristics i t(rms) 1a v drm 600v or 800v i gt 5ma ? applications z z ac switching z z phase control ? features z ??? ???? z planar chip for reliability and uniform ? package pin description 1 1 mt1 2 ? g 3 2 mt2 z ??? ? z low on-state voltage and high i tsm z rohs ? z rohs products ? order messages order code ? marking ? package ? packaging BT131-o-t-n-c BT131 to-92 ? bag to-92
r BT131 201510f 2/6 ?? absolute ratings (t c =25 ) ? parameter symbol condition ? value unit ???? repetitive peak off-state voltage v drm 600 800 v ?? on-state rms current i t(rms) full sine wave 1 a full sine wave ,t=20ms 12.5 a ????? non- repetitive surge peak on-state current i tsm full sine wave ,t=16.7ms 13.8 a i 2 t t=10ms 1.28 a 2 s ??? repetitive rate of rise of on-state current after triggering di/dt i tm =1.5a, i g =0.2a, di g /dt=0.2a/ s 50 a/ s ?? peak gate current i gm 2 a ??? peak gate voltage v gm 5 v ?? peak gate power p gm 5 w ?? average gate power p g(av) over any 20ms period 0.5 w ? storage temperature t stg -40~150 operation junction temperature t vj 125
r BT131 201510f 3/6 electrical characteristic (t c =25 ) ? parameter symbol condition min typ max unit ??? peak repetitive blocking current i drm v dm =v drm , tj=125 , gate open - 0.1 0.5 ma ???? peak on-state voltage v tm i tm =2a - 1.2 1.5 v mt1(-),mt2(+),g(+) - 0.4 5 ma mt1(-),mt2(+),g(-) - 1.3 5 ma mt1(+),mt2(-),g(-) - 1.4 5 ma ? gate trigger current i gt v dm =12v, r l =100 mt1(+),mt2(-),g(+) - 3.8 7 ma mt1(-),mt2(+),g(+) - - 1.5 v mt1(-),mt2(+),g(-) - - 1.5 v mt1(+),mt2(-),g(-) - - 1.5 v ?? gate trigger voltage v gt v dm =12v, r l =100 mt1(+),mt2(-),g(+) - - 1.5 v ?? holding current i h v dm =12v, i gt =0.1a - 1.3 5 ma mt1(-),mt2(+),g(+) - 1.2 5 ma mt1(-),mt2(+),g(-) - 4.0 8 ma mt1(+),mt2(-),g(-) - 1.0 5 ma ? latching current i l v dm =12v, i gt =0.1a mt1(+),mt2(-),g(+) - 2.5 8 ma ??? rise of off- state voltage dv/dt v dm =67% v drm(max) , tj=125 , r gk =1k ? 10 20 - v/ s ??? gate controlled turn-on time tgt i tm =1.5a, v dm =v drm(max) , i g =0.1a, di g /dt=5a/ s - 2 - s thermal characteristic ? parameter symbol condition min typ max unit ?? thermal resistance junction to lead r th(j-c) full cycle 60 /w
r BT131 201510f 4/6 electrical characteristics (curves) p tot - i t(rms) i t(rms) - t mb ??? ptot(w) ?? i t rms (a) ?? i t rms a ? t mb ( ) i tsm - tp i t(rms) - ts ??? i tsm (a) ?? i t rms (a) tp(ms) ? ts(s) i gt (tj)/i gt (25 ) - tj v tm - i t ? i gt (tj)/i gt (25 ) i t (a) tj( ) ??? v tm (v)
r BT131 201510f 5/6 ? package mechanical data to-92 unit mm symbol ?? mm size mm a 3.30-3.90 b 0.35-0.55 c 0.31-0.51 d 4.30-4.90 e 4.30-4.90 e 1.17-1.37 l 12.50-15.50 q1 0.85-1.00
r BT131 201510f 6/6 ? note 1. ???????? ?????? ???? 2. ???? ?? 3. ????? ?????? 4. ??? 1. jilin sino-microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering, please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don?t be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino-microelectronics co., ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? contact jilin sino-microelectronics co., ltd. ???? 99 add: no.99 shenzhen street, jilin city, jilin province, china. ?? 132013 post code: 132013 ? 86-432-64678411 te l 86-432-64678411 86-432-64665812 fax 86-432-64665812 ? www.hwdz.com.cn web site www.hwdz.com.cn ? market department ??? 99 add: no.99 shenzhen st reet, jilin city, jilin province, china. ?? 132013 post code: 132013 86-432-64675588 64675688 64678411 tel: 86-432-64675588 64675688 64678411 86-432-64671533 fax: 86-432-64671533 ? appendix ?? revision history date ? last rev. new rev. ? description of changes 2009-5-15 200901c 200905d ???? 2009-11-3 200905d 200911e ?? 2015-10-21 200911e 201510f ? to-92 ?
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